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	Monolithic integration of micro-cantilever with conditioning circuits based on SOI techniques
	Zhang, Haitao ; Yu, Xiaomei ; Wang, Xiaobao ; Zhang, Dacheng
	2006
关键词	SOI micro-cantilever integration circuits
英文摘要	This paper presents a monolithic integration of piezoresistive micro-cantilevers with CMOS (Complementary Metal Oxide Semiconductor) analog amplifier and digital multiplexer based on the techniques of SOI (Silicon On Insulator) CMOS and MEMS (Micro Electronic Mechanical System). The three modules, signal detection, signal selection and signal amplification, of the design are proposed step by step. Then, SOI-CMOS-PD (Partially Depleted) is compared with SOI-CMOS-FD (Fully Depleted) to ensure its advantages in analog IC. And the post-CMOS process is designed as manufacture solution. Finally, simulations and test results are presented to prove the availability of the whole project.; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/NEMS.2006.334576
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293389]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Haitao,Yu, Xiaomei,Wang, Xiaobao,et al. Monolithic integration of micro-cantilever with conditioning circuits based on SOI techniques. 2006-01-01.

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