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	Influence of the Poole-Frenkel effect on programming and erasing in charge trapping memories
	Song, Yunchen ; Du, Gang ; Yang, Jinfeng ; Jin, Rui ; Han, Ruqi ; Lee, Keun-Ho ; Liu, Xiaoyan
	2007
英文摘要	In this work, we included Poole-Frenkel (P-F) detrapping mechanism to our simulator to calculate programming/erasing characteristics of charge trapping memory, and comprehensively analyze the impacts of temperature, trap depth and parameters of P-F model on program window and erasing speed. Our results reveal that Poole-Frenkel effect could accelerate the erasing operation, but it also could reduce the program window and cause the electric characteristics sensitive to temperature.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000252105600083&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; EI; CPCI-S(ISTP); 2
语种	英语
DOI标识	10.1007/978-3-211-72861-1_83
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293367]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Song, Yunchen,Du, Gang,Yang, Jinfeng,et al. Influence of the Poole-Frenkel effect on programming and erasing in charge trapping memories. 2007-01-01.

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