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	A Comparison of Avalanche Injection of Holes and Total Dose Radiation Effects in RadFETs
	Tang, Hao ; Wang, Yi ; Wang, Jinyan ; Zheng, Yijun ; Jin, Yufeng
	2010
关键词	MOS STRUCTURES SENSITIVITY CHARGE OXIDE
英文摘要	Radiation sensitive Field Effected Transistors (RadFETs) have been widely used as dosimeters to detect the Total Dose Radiation Effects (TDRE). Because ionizing radiation for testing RadFET samples is costly and inconvenient, Avalanche Injection of Holes (AIH) was introduced to simulate or substitute the radiation methods to evaluate the quality of RadFETs in this paper. Several kinds of dielectric layers of RadFETs were fabricated and the comparison of AIH and TDRE was investigated. It was found that AIH can cause the similar Delta V-TH and annealing change trends with TDRE to predict the radiation characteristics of RadFETs.; Electrochemistry; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 2
语种	英语
DOI标识	10.1149/1.3360766
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293028]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Tang, Hao,Wang, Yi,Wang, Jinyan,et al. A Comparison of Avalanche Injection of Holes and Total Dose Radiation Effects in RadFETs. 2010-01-01.

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