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	Investigation of Different Strain Configurations in Gate-All-Around Silicon Nanowire Transistor
	Yun, Quanxin ; Zhuge, Jing ; Huang, Ru ; Wang, Runsheng ; An, Xia ; Zhang, Liangliang ; Zhang, Xing ; Wang, Yangyuan
	2010
关键词	ELECTRON-TRANSPORT PROPERTIES CARRIER-TRANSPORT PERFORMANCE NMOSFETS MOBILITY MOSFETS STRESS CMOS SOI SI
英文摘要	The impacts of three different strain configurations on both DC and RF performance of n-type silicon nanowire transistors (n-SNWTs) are investigated. It is found that the longitudinal tensile strain is the most efficient in improving the driving current and RF performance of n-SNWTs under the same stress value. In addition, the transverse compressive strain is also beneficial to the performance improvement, and can be combined in the stress engineering. Particularly, transverse biaxial compressive strain can effectively enhance the driving current, and at the same time slightly decrease the off-current of n-SNWT, which is beneficial for high speed and low power design. The results indicate that, due to the unique feature of gate-all-around 1D structure, the strain design in SNWTs, especially the combination of longitudinal strain and transverse strain, can be specially optimized for better device performance.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000313327800003&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Electrochemistry; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1149/1.3360589
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293020]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yun, Quanxin,Zhuge, Jing,Huang, Ru,et al. Investigation of Different Strain Configurations in Gate-All-Around Silicon Nanowire Transistor. 2010-01-01.

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