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	Evaluation of Quasi-Ballistic Transport in Nano-MOSFETs by Deterministic Solver of the Time Dependent Multi-subbands Boltzmann Transport Equation
	Wang, Yong ; Lu, Tiao ; Liu, Xiaoyan ; Du, Gang
	2011
关键词	Boltzmann Transport Equation Quasi-ballistic transport Virtual Source
英文摘要	In this paper, the ballistic and quasi-ballistic transport characteristics of Sub-30 nm double gate MOSFETs are simulated by deterministic solver of the Time Dependent Muti-subbands Boltzmann Transport Equation [1]. The scattering effect on the Sub-30 nm double gate MOSFETs is investigated not only through analyzing ON current, but also the source to channel barrier height, average electron velocity and electron density at virtual source (VS: top of the barrier).; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000304037500145&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/EDSSC.2011.6117726
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292919]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Yong,Lu, Tiao,Liu, Xiaoyan,et al. Evaluation of Quasi-Ballistic Transport in Nano-MOSFETs by Deterministic Solver of the Time Dependent Multi-subbands Boltzmann Transport Equation. 2011-01-01.

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