QQ客服 官方微博 反馈留言

	Fabrication of Silicon Nano-wire by Oxidation
	Wang, Xiaofei ; Zhang, Yufei ; Yu, Kan ; Yu, Xiaomei
	2011
关键词	Silicon nano-wire Thermal Oxidation Lateral diffusion Nanospintronics devices
英文摘要	In this paper, we report a method of fabricating silicon nano-wire based on thermal oxidation technique. In this method, we first fabricate a wider structure with traditional lithography, and then use a layer of silicon nitride as mask to oxidize silicon. At the same time, due to the lateral diffusion and oxidation of oxidant, silicon is consumed by oxidant and the width of the silicon structure will be reduced to nano range when we remove the silicon dioxide. The factors affecting the ratio of vertical and lateral oxidation, for example, the gentle slope caused by isotropic oxidation and the inhomogeneity of the sidewall of silicon nano-wire, are discussed at last. Our results should be useful in generating silicon-based nanospintronics devices with careful selection of the oxide parameters.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000308677000109&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.4028/www.scientific.net/KEM.483.565
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292894]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Xiaofei,Zhang, Yufei,Yu, Kan,et al. Fabrication of Silicon Nano-wire by Oxidation. 2011-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。