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	Performance of Pentacene Thin Film Transistors Fabricated with Different Deposition Speeds
	Yao, Hui-Kun ; Sun, Lei ; Geng, You-Feng ; Xia, Yu-Qian ; Wang, Yi-Jiao ; Lun, Zhi-Yuan ; Wang, Tai-Huan ; Zhu, Wen-Tong ; Han, De-Dong
	2012
关键词	Pentacene-TFT evaporation electrical properties
英文摘要	Bottom-gated pentacene thin film transistors have been fabricated with different deposition speeds and the devices' current-voltage properties are reported. The pentacene films are formed through evaporation in low pressure. The characteristics of the surface morphologies and microstructures of the samples were studied respectively. We also studied the transfer characteristics and output properties. Pentacene-TFTs can exhibit excellent electrical properties while V-g changes from 0 to -70V, and I-on/I-off ratio is larger than 10(4) and OFF-state current is smaller than -1.3 x10(-10) A as V-d=-100V.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000319824700322&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.2012.6467745
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292722]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yao, Hui-Kun,Sun, Lei,Geng, You-Feng,et al. Performance of Pentacene Thin Film Transistors Fabricated with Different Deposition Speeds. 2012-01-01.

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