QQ客服 官方微博 反馈留言

	AlGaN/GaN HEMTs with Thermal Oxidation Treatment for Microwave Power Applications
	Meng, Di ; Liu, Shenghou ; Lin, Shuxun ; Wen, Cheng P. ; Wang, Jinyan ; Hao, Yilong ; Wu, Wengang
	2012
关键词	HETEROSTRUCTURE TRANSISTOR
英文摘要	AlGaN/GaN high electron mobility transistors (HEMTs) with thermal oxidation treatment (TOT) are found to exhibit very low gate leakage current (10(-7) A/mm of gate periphery up to -20 V applied reverse gate bias) and high maximum extrinsic transconductance (180 mS/mm) The two-dimensional electron gas concentration increased obviously after the oxidation treatment. A current gain cutoff frequency (f(T)) of 36 GHz and a maximum oscillation frequency (f(MAX)) of 60 GHz are deduced from S-parameter measurements for transistors with a gate length of 0.4 mu m. The high performance TOT AlGaN/GaN HEMTs are highly promising for microwave power amplifier applications in radar and communication systems.; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.2012.6467803
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292711]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Meng, Di,Liu, Shenghou,Lin, Shuxun,et al. AlGaN/GaN HEMTs with Thermal Oxidation Treatment for Microwave Power Applications. 2012-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。