QQ客服 官方微博 反馈留言

	On the AC Random Telegraph Noise (RTN) in MOS Devices: An Improved Multi-phonon based Model
	Gong, Nanbo ; Wang, Runsheng ; Liu, Changze ; Zou, Jibin ; Huang, Ru
	2012
英文摘要	As devices scaling down into nanometer region, the random telegraph noise (RTN) has become a significant issue for device variability and reliability, which has been extensively studied at DC conditions and recently also at AC conditions. The nonradiative multiphonon (NMP) theory has been introduced to describe the statistical characteristics of DC RTN, however, basic NMP model cannot explain the frequency dependence of AC RTN statistics. In this paper, by analyzing detailed trapping/detrapping behavior of oxide defects, it is found that there exist metastable states due to the polarization effect of localized defect. An improved NMP model is proposed for the first time, which agrees well with experiments. The results are helpful for deep understanding of AC RTN in nanoscaled devices and the future circuit design against RTN.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000319824700064&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292693]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Gong, Nanbo,Wang, Runsheng,Liu, Changze,et al. On the AC Random Telegraph Noise (RTN) in MOS Devices: An Improved Multi-phonon based Model. 2012-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。