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	Analytic Model of Endurance Degradation and Its Practical Applications for Operation Scheme Optimization in Metal Oxide Based RRAM
	Huang, P. ; Chen, B. ; Wang, Y. J. ; Zhang, F. F. ; Shen, L. ; Liu, R. ; Zeng, L. ; Du, G. ; Zhang, X. ; Gao, B. ; Kang, J. F. ; Liu, X. Y. ; Wang, X. P. ; Weng, B. B. ; Tang, Y. Z. ; Lo, G-Q. ; Kwong, D.L.
	2013
英文摘要	An analytic model for the endurance degradation of metal oxide based RRAM is presented for the first time. The endurance degradation behaviors under various operation modes can be predicted by the model, which were verified by the measured data in different devices. Furthermore, the 106 endurance for all 4-level resistance states in HfOX-based RRAM is demonstrated by using the proposed optimization operation scheme for multi-level data storage based on the model prediction. Guided by the model, a dynamic self-recovery operation scheme is developed to achieve more than 2 orders endurance enhancement at a high switching speed (10 ns).; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/IEDM.2013.6724685
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292664]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, P.,Chen, B.,Wang, Y. J.,et al. Analytic Model of Endurance Degradation and Its Practical Applications for Operation Scheme Optimization in Metal Oxide Based RRAM. 2013-01-01.

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