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	Gate-Modulated Photoresponse in Graphene Field-Effect Transistors
	Wei, Zijun ; Wang, Zhigang ; Zhao, Huabo ; Ye, Tianyang ; Ren, Liming ; Guo, Jian ; Jia, Yuehui ; Zhang, Zhaohui ; Fu, Yunyi ; Huang, Ru ; Zhang, Xing
	2013
关键词	LAYER GRAPHENE DEVICES
英文摘要	In this paper, we have investigated the photoresponse in a graphene field-effect transistor (FET). We find that significant photocurrents can be detected when the device is illuminated by a laser beam (lambda = 633nm). The back-gate can effectively modulate the magnitude and direction of the photocurrent. The possible reasons have been qualitatively analyzed. Our results will provide a better understanding of the electric field distribution in graphene devices, and may also be helpful to find a new way to realize the graphene-based photodetectors.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000338945700148&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Electrochemistry; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1149/05201.1033ecst
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292498]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wei, Zijun,Wang, Zhigang,Zhao, Huabo,et al. Gate-Modulated Photoresponse in Graphene Field-Effect Transistors. 2013-01-01.

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