QQ客服 官方微博 反馈留言

	Write Disturb Analyses on Half-Selected Cells of Cross-Point RRAM Arrays
	Li, Haitong ; Chen, Hong-Yu ; Chen, Zhe ; Chen, Bing ; Liu, Rui ; Qiu, Gang ; Huang, Peng ; Zhang, Feifei ; Jiang, Zizhen ; Gao, Bin ; Liu, Lifeng ; Liu, Xiaoyan ; Yu, Shimeng ; Wong, H.S. Philip ; Kang, Jinfeng
	2014
关键词	Resistive random access memory (RRAM) reliability write disturb cross-point failure MODEL
英文摘要	Write disturb on half-selected (HS) cells is investigated through electrical measurements and large-scale array simulations. The experimental results collected from the individual devices under constant stress voltage and consecutive pulse operation are correlated with the HS cells in large-scale arrays based on a physics-based SPICE compact model. The impact of write/read disturb on the HS cells at different locations of the arrays is analyzed. Design guidelines for the optimized array size based on the experimental data and HSPICE simulations are presented: e.g., a 16 kb array can maintain its stored data pattern for 5x10(6) pulses and will have 164 false bits among half-selected cells after write disturb.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000343833200160&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/IRPS.2014.6861158
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292456]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Haitong,Chen, Hong-Yu,Chen, Zhe,et al. Write Disturb Analyses on Half-Selected Cells of Cross-Point RRAM Arrays. 2014-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。