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	GaN HEMT Structure Modeling and Characterization Techniques
	Wen, Cheng P.
	2014
关键词	Polarization induced charge pairs GaN HEMT power amplifier current collapse
英文摘要	A novel device model has been established for GaN HEMT, featuring polarization induced, positive/negative charge pairs. Unconventional techniques are found necessary to characterize, and to optimize the design of the polar semiconductor based device for transient (current collapse) free, efficient, microwave power amplification in communication systems; Computer Science, Hardware & Architecture; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/IEEE-IWS.2014.6864186
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292446]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wen, Cheng P.. GaN HEMT Structure Modeling and Characterization Techniques. 2014-01-01.

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