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	Understanding the Correlation of HCI and NBTI Degradation in pLDMOSFETs from MR-DCIV Technique
	He, Yandong ; Zhang, Ganggang ; Zhang, Xing
	2014
关键词	TRANSISTORS SILICON
英文摘要	Multi-region DCIV technique(MR-DCIV) has demonstrated the capability to obtain the whole interface state profile in STI-based pLDMOSFETs. Based on its independence of forward bias and temperature, the unified MR-DCIV current modeling was established and verified. HCI and BTI related degradation in pLDMOSFETs has been experimentally studied, including Igmax/Ib max, Vgmax and NBTI stresses. Our results reveal that Vgmax stress results in larger threshold voltage shift due to the higher interface state generation at channel and accumulation regions, linking to NBTI effect. Vgmax stress condition became the worse case degradation condition for pLDMOSFETs. ? 2014 IEEE.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000346735500041&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Computer Science, Hardware & Architecture; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 4
语种	英语
DOI标识	10.1109/ISPSD.2014.6856003
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292419]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Yandong,Zhang, Ganggang,Zhang, Xing. Understanding the Correlation of HCI and NBTI Degradation in pLDMOSFETs from MR-DCIV Technique. 2014-01-01.

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