QQ客服 官方微博 反馈留言

	MEV ION-BEAM INDUCED CRYSTALLIZATION IN HIGH-ENERGY AS+ ION-IMPLANTED SILICON
	WANG, ZL ; ZHANG, BX
	1991
关键词	INDUCED EPITAXIAL REGROWTH
英文摘要	MeV ion-beam induced crystallization (IBIC) and amorphization of silicon have been investigated. Various damage morphologies produced in Si (100) by 1 and 1.5 MeV As+ with different fluences from 4 x 10(13) cm-2 to 5 x 10(14) cm-2 were annealed by 1.6 MeV Si+ ion bombardment at 300-degrees-C. After ion-beam induced crystallization, the predamaged layers, either lightly disordered or amorphous, were recrystallized well and no pronounced secondary defects in the As+ implanted region were observed according to the channeling measurements and XTEM analysis. The annealing dose dependence of crystallization behavior has been studied. Appropriately controlling the dose and dose rate of the annealing beam during IBIC, the added damage produced by the annealing beam will be reduced.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1991FZ02900095&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Instruments & Instrumentation; Nuclear Science & Technology; Physics, Atomic, Molecular & Chemical; Physics, Nuclear; SCI(E); 2
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292369]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	WANG, ZL,ZHANG, BX. MEV ION-BEAM INDUCED CRYSTALLIZATION IN HIGH-ENERGY AS+ ION-IMPLANTED SILICON. 1991-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。