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	Evaluations of scaling properties for Ge on insulator MOSFETs in nano-scale
	Du, G ; Liu, XY ; Xia, ZL ; Wang, YK ; Hou, DQ ; Kang, JF ; Han, RQ
	2005
关键词	germanium MOSFET nano-scale scaling properties Monte Carlo MONTE-CARLO-SIMULATION SEMICONDUCTORS TRANSPORT
英文摘要	Germanium metal-oxide-semiconductor field-effect transistors (MOSFETs) have attracted tremendous attention due to the high carrier mobility especially in the low-field. Compared to Si, in bulk germanium the velocity Would saturate at a lower field with a lower saturation velocity. Thus the scaling behavior of germanium MOSFET with gate length in nano-scale is very important. In this work, characteristics of both n- and p-channel germanium on Insulator (GOI) MOSFETs with channel length (L(ch)) ranging from 20 nm to 130 nm are simulated by 2D self-consistent full-band Monte Carlo device Simulator to investigate the scaling properties. The results indicate that both for n and p channel GOI MOSFETs have favorable scaling properties in nano-scale due to the non-stationary transport near source side especially for p channel device. But the surface roughness scattering is a critical issue that might Suppress the non-stationary transport. Short channel effect (SCE) is serious in GOI devices and much thinner Germanium layer have to use to optimize the performance.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000229095700023&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; CPCI-S(ISTP); 2
语种	英语
DOI标识	10.1143/JJAP.44.2195
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292218]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Du, G,Liu, XY,Xia, ZL,et al. Evaluations of scaling properties for Ge on insulator MOSFETs in nano-scale. 2005-01-01.

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