Quantitative investigation of the velocity overshoot overestimation&apos;s   impact on predicting device characteristics in HD model

CORC > 北京大学 > 信息科学技术学院

	Quantitative investigation of the velocity overshoot overestimation's impact on predicting device characteristics in HD model
	Hou, DQ ; Xia, ZL ; Du, G ; Liu, XY ; Wang, Y ; Kang, JF ; Han, RQ
刊名	chinese journal of electronics
	2006
关键词	velocity overshoot overestimation hydrodynamic model Monte Carlo method double gate MOSFET INVERSION-LAYERS VOLUME INVERSION SILICON PERFORMANCE TRANSISTORS SIMULATION MOSFET
英文摘要	In this paper, we quantitatively investigate the overestimation of the Velocity overshoot (VO) effects in the Hydrodynamic (HD) model, by simulating nanoscale Double gate (DG) MOSFETs. The simulation results are evaluated by the Monte Carlo (MC) method. As we know, the overestimation of VO in HD model will lead to serious errors in predicting nanoscale devices' performance. We explored the overestimation of on currents due to the overestimation of VO in HD mode. The dependence of the overestimation values on silicon thickness and channel length is presented and discussed. In HD model, the overestimation of on currents rises with increasing silicon thickness. The influence of the channel length normalized with silicon thickness is somewhat complicated. For shorter channel devices, the accuracy of the velocity near the source side in the channel is particularly critical to obtain right values of on current. While for devices with relatively longer channel, on currents become more sensitive to the velocity near the drain side.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000236935300008&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 0; ARTICLE; 2; 213-216; 15
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292168]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Hou, DQ,Xia, ZL,Du, G,et al. Quantitative investigation of the velocity overshoot overestimation's impact on predicting device characteristics in HD model[J]. chinese journal of electronics,2006.
APA	Hou, DQ.,Xia, ZL.,Du, G.,Liu, XY.,Wang, Y.,...&Han, RQ.(2006).Quantitative investigation of the velocity overshoot overestimation's impact on predicting device characteristics in HD model.chinese journal of electronics.
MLA	Hou, DQ,et al."Quantitative investigation of the velocity overshoot overestimation's impact on predicting device characteristics in HD model".chinese journal of electronics (2006).