Enhanced ultraviolet electroluminescence from p-Si/n-ZnO nanorod array   heterojunction

doi:10.1116/1.3079657

CORC > 北京大学 > 信息科学技术学院

	Enhanced ultraviolet electroluminescence from p-Si/n-ZnO nanorod array heterojunction
	Sun, Minghua ; Zhang, Qi-Feng ; Sun, Hui ; Zhang, Junyan ; Wu, Jin-Lei
刊名	journal of vacuum science technology b
	2009
关键词	LIGHT-EMITTING DIODE NANOWIRES
DOI	10.1116/1.3079657
英文摘要	The authors report enhanced ultraviolet electroluminescence at room temperature from a diode structure consisting of vertically oriented ZnO nanorod arrays grown on a p-typed silicon substrate. Excitonic emitting peak at wavelength of 385 nm with a full width at half maximum (FWHM) of 23 nm and a defect-related visible emitting peak at the wavelength of 546 nm with a FWHM of 124 nm are observed from this structure under forward-bias voltage. The intensity ratio of the ultraviolet peak and the visible peak reaches 4.7. The scanning electron microscope, x-ray diffraction, energy dispersive x ray, I-V, and electroluminescence measurements demonstrate that good crystal structure and rectifying diodelike behavior are obtained and defect-related visible light emission is greatly restrained. (C) 2009 American Vacuum Society. [DOI: 10.1116/1.3079657]; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied; SCI(E); EI; 8; ARTICLE; 2; 618-621; 27
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292021]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Sun, Minghua,Zhang, Qi-Feng,Sun, Hui,et al. Enhanced ultraviolet electroluminescence from p-Si/n-ZnO nanorod array heterojunction[J]. journal of vacuum science technology b,2009.
APA	Sun, Minghua,Zhang, Qi-Feng,Sun, Hui,Zhang, Junyan,&Wu, Jin-Lei.(2009).Enhanced ultraviolet electroluminescence from p-Si/n-ZnO nanorod array heterojunction.journal of vacuum science technology b.
MLA	Sun, Minghua,et al."Enhanced ultraviolet electroluminescence from p-Si/n-ZnO nanorod array heterojunction".journal of vacuum science technology b (2009).