Investigation of silicon/glass anodic bonding with PECVD silicon carbide as the intermediate layer | |
Tang, W. ; Meng, B. ; Su, W. ; Zhang, H. X. | |
刊名 | journal of micromechanics and microengineering |
2012 | |
关键词 | THIN-FILMS GLASS PRESSURE NITRIDE SENSORS OXIDE |
DOI | 10.1088/0960-1317/22/9/095011 |
英文摘要 | This paper describes the study of the conventional silicon/glass anodic bonding with plasma enhanced chemical vapor deposited silicon carbide (PE-SiC) as the intermediate layer, in order to evaluate the feasibilities of applying PE-SiC as the device's passivation layer prior to the packaging bonding and construction layer based on the bond-and-transfer technique. It is found that the mechanism of this bonding is similar to the traditional anodic bonding. As the PE-SiC thickened, the bond strength declined; meanwhile, the leak rate remained at the same level with the silicon/glass bonding. Further experiments revealed that the bonding increased the interlayer's tensile stress by 70.7 MPa and diminished the stress gradient by 24.6 MPa mu m(-1).; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000308210600021&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Instruments & Instrumentation; Materials Science, Multidisciplinary; Mechanics; SCI(E); EI; 3; ARTICLE; 9; 22 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/291818] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Tang, W.,Meng, B.,Su, W.,et al. Investigation of silicon/glass anodic bonding with PECVD silicon carbide as the intermediate layer[J]. journal of micromechanics and microengineering,2012. |
APA | Tang, W.,Meng, B.,Su, W.,&Zhang, H. X..(2012).Investigation of silicon/glass anodic bonding with PECVD silicon carbide as the intermediate layer.journal of micromechanics and microengineering. |
MLA | Tang, W.,et al."Investigation of silicon/glass anodic bonding with PECVD silicon carbide as the intermediate layer".journal of micromechanics and microengineering (2012). |
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