Leakage Power Reduction of Adiabatic Circuits Based on FinFET Devices

doi:10.1587/transele.E96.C.1068

CORC > 北京大学 > 信息科学技术学院

	Leakage Power Reduction of Adiabatic Circuits Based on FinFET Devices
	Liao, Kai ; Cui, XiaoXin ; Liao, Nan ; Ma, KaiSheng
刊名	ieice transactions on electronics
	2013
关键词	leakage current reduction adiabatic circuits FinFETs power consumption limiting frequency noise immunity LOGIC VLSI
DOI	10.1587/transele.E96.C.1068
英文摘要	With the technology scaling down, leakage power becomes an important part of total power consumption. The relatively large leakage current weakens the energy recovery capability of adiabatic circuits and reduces its superiority, compared with static CMOS circuits in the field of low-power design. In this paper, we rebuild three types of adiabatic circuits (2N2N2P, IPAL and DCPAL) based on FinFET devices to obtain a large leakage power reduction by rationally utilizing the different operating modes of FinFET devices (SG, LP, and IG). A 16-bit adiabatic adder has been investigated to demonstrate the advantages of FinFET adiabatic circuits. The Predictive Technology Model (PTM) is used for 32-nm bulk MOSFET and FinFET devices and all of the simulations are based on HSPICE. The results evince the proposed FinFET adiabatic circuits have a considerable reduction (more than 60% for SG mode FinFET and more than 80% for LP mode FinFET) of power consumption compared with the bulk MOSFET ones. Furthermore, the FinFET adiabatic circuits also have higher limiting frequency of clock source and better noise immunity.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000323236800006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 3; ARTICLE; 8; 1068-1075; E96C
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291727]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liao, Kai,Cui, XiaoXin,Liao, Nan,et al. Leakage Power Reduction of Adiabatic Circuits Based on FinFET Devices[J]. ieice transactions on electronics,2013.
APA	Liao, Kai,Cui, XiaoXin,Liao, Nan,&Ma, KaiSheng.(2013).Leakage Power Reduction of Adiabatic Circuits Based on FinFET Devices.ieice transactions on electronics.
MLA	Liao, Kai,et al."Leakage Power Reduction of Adiabatic Circuits Based on FinFET Devices".ieice transactions on electronics (2013).