Highly sensitive seesaw capacitive pressure sensor based on SOI wafer

CORC > 北京大学 > 信息科学技术学院

	Highly sensitive seesaw capacitive pressure sensor based on SOI wafer
	Yang, C. C. ; Zhao, Q. ; Gao, C. C. ; Liu, G. D. ; Zhang, Y. X. ; Cui, W. P. ; Hao, Y. L.
刊名	electronics letters
	2014
DOI	10.1049/el.2013.4170
英文摘要	A novel microelectromechanical system capacitive pressure sensor with two wings, which amplify the mechanical deformation of the pressure sensing diaphragm and increase the sensor's sensitivity, is presented. This seesaw structure is available for both single and differential capacitive pressure sensors. To verify this design, a single capacitive pressure sensor is manufactured based on silicon on a insulator (SOI) wafer. The test result shows that this pressure sensor has a sensitivity of 7.75 fF/kPa.; Engineering, Electrical & Electronic; SCI(E); EI; 0; ARTICLE; gaocc@pku.edu.cn; 5; 376-+; 50
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291644]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yang, C. C.,Zhao, Q.,Gao, C. C.,et al. Highly sensitive seesaw capacitive pressure sensor based on SOI wafer[J]. electronics letters,2014.
APA	Yang, C. C..,Zhao, Q..,Gao, C. C..,Liu, G. D..,Zhang, Y. X..,...&Hao, Y. L..(2014).Highly sensitive seesaw capacitive pressure sensor based on SOI wafer.electronics letters.
MLA	Yang, C. C.,et al."Highly sensitive seesaw capacitive pressure sensor based on SOI wafer".electronics letters (2014).