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	Research on a novel integrated pressure sensor for high temperature
	Zhang, W ; Jia, JB ; Liu, B
	2002
关键词	high temperature pressure sensor ploysilicon CMOS integrated circuit
英文摘要	Pressure sensor for high temperature is very useful. Some special materials such as SiC and SOI can be used to manufacture high temperature pressure sensor, but due to the high cost, they cannot be used widely. In this paper, a novel polysilicon pressure sensor is designed, further more, a CMOS integrated circuit is used to change output signal into -5-+5V industrial signal. After simulation and process experiments, the best condition of polysilicon diffusion concentration was found, the temperature coefficient is reduced to nearly zero between -40degreesC and 180degreesC.; Engineering, Multidisciplinary; Mathematics, Applied; Mechanics; Physics, Mathematical; SCI(E); CPCI-S(ISTP); 13
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291561]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, W,Jia, JB,Liu, B. Research on a novel integrated pressure sensor for high temperature. 2002-01-01.

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