Monte Carlo simulation of 50nm n-channel Schottky barrier tunneling   transistors

CORC > 北京大学 > 信息科学技术学院

	Monte Carlo simulation of 50nm n-channel Schottky barrier tunneling transistors
	Du, G ; Liu, XY ; Sun, L ; Yue, JP ; Han, RQ
刊名	chinese journal of electronics
	2002
关键词	Schottky barrier contact Schottky barrier tunneling transistor Monte Carlo device simulation FIELD-EFFECT TRANSISTORS NUMERICAL-SIMULATION EMISSION
英文摘要	The performance of 50nm n-channel Schottky barrier tunneling transistor (SBTT) is analyzed by self-consistent ensemble Monte Carlo (EMC) method, in which the Schottky barrier is treated as a boundary condition. The tunneling effect and Schottky effect are considered. In this SBTT, the source/drain contacts are silicide and the substrate is n-type silicon. The simulation results clarify the characteristics of n-channel SBTT, and the computational experiments can also help to optimize the parameters of 50 nm n-channel SBTT.; Engineering, Electrical & Electronic; SCI(E); EI; 6; ARTICLE; 2; 200-203; 11
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291544]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Du, G,Liu, XY,Sun, L,et al. Monte Carlo simulation of 50nm n-channel Schottky barrier tunneling transistors[J]. chinese journal of electronics,2002.
APA	Du, G,Liu, XY,Sun, L,Yue, JP,&Han, RQ.(2002).Monte Carlo simulation of 50nm n-channel Schottky barrier tunneling transistors.chinese journal of electronics.
MLA	Du, G,et al."Monte Carlo simulation of 50nm n-channel Schottky barrier tunneling transistors".chinese journal of electronics (2002).