Nonlinear 1/f noise in ultrathin gate MOSFETs undergoing soft breakdown

CORC > 北京大学 > 信息科学技术学院

	Nonlinear 1/f noise in ultrathin gate MOSFETs undergoing soft breakdown
	Huo, ZL ; Mao, LF ; Yang, GY ; Tan, CH ; Xu, MZ
刊名	chinese journal of electronics
	2002
关键词	noise phenomena soft breakdown MOSFET (metal-oxide-semiconductor field effect transistor) random process HARD BREAKDOWN OXIDES
英文摘要	In this paper, we examine the noise characteristics of gate leakage current undergoing soft breakdown. For ultra-thin gate oxide (less than or equal to 4 nm), experiments show that gate current noise belongs to low frequency 1/f(gamma) noise over a temperature range 300 K less than or equal to T less than or equal to 378 K, where gamma varies between 1 and 2. And gamma will increase with the increasing temperature. Finally, random process is introduced to give a qualitative explanation.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000178918500009&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 0; ARTICLE; 4; 472-474; 11
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291524]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huo, ZL,Mao, LF,Yang, GY,et al. Nonlinear 1/f noise in ultrathin gate MOSFETs undergoing soft breakdown[J]. chinese journal of electronics,2002.
APA	Huo, ZL,Mao, LF,Yang, GY,Tan, CH,&Xu, MZ.(2002).Nonlinear 1/f noise in ultrathin gate MOSFETs undergoing soft breakdown.chinese journal of electronics.
MLA	Huo, ZL,et al."Nonlinear 1/f noise in ultrathin gate MOSFETs undergoing soft breakdown".chinese journal of electronics (2002).