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	Drain disturb related to negative VB in NOR flash
	Kai, Shi ; Mingzhen, Xu ; Changhua, Tan
	2007
英文摘要	In this paper, the effects of negative substrate bias on the drain disturb of NOR ETOX? flash EEPROM have been investigated. According to the quantity of the charge stored in the floating gate, the tests can be separated into two cases (CL: Charge Loss & CG: Charge Gain), and in some of the cases, an optimal negative substrate bias condition will be obtained as a trade-off between efficiency and reliability. ? 2006 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2006.306514
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/263646]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Kai, Shi,Mingzhen, Xu,Changhua, Tan. Drain disturb related to negative VB in NOR flash. 2007-01-01.

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