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	Improved program mode for memory array based on ferroelectric-gate field-effect transistor
	Li, W.F. ; Kang, J.F. ; Liu, X.Y. ; Du, G. ; Han, R.Q. ; Wang, Y.Y. ; Ma, T.P.
	2007
英文摘要	An improved program mode for memory array based on ferroelectric field effect transistor (Fe-FET) is proposed. A SPICE macro-model for the transfer characteristics of Fe-FET devices, based on the Schmitt trigger circuit, is demonstrated and applied to circuit simulation. The simulation results show that, compared to the conventional program mode, the improved program mode can effectively reduce the requirements for the performance of Fe-FET, and consequently enhance the operation robustness of the Fe-FET based memory array circuit, as well as extend the design window. ? 2006 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2006.306515
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/263643]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, W.F.,Kang, J.F.,Liu, X.Y.,et al. Improved program mode for memory array based on ferroelectric-gate field-effect transistor. 2007-01-01.

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