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	Recessed source/drain for scaling SOI MOSFET to the limit
	Ke, Wei ; Han, Xu ; Li, Dingyu ; Liu, Xiaoyan ; Han, Ruqi ; Zhang, Shengdong
	2007
英文摘要	In this work, the recessed source/drain (ReS/D) ultra-thin body (UTB) SOI MOS transistor is investigated in detail. Results indicate that die ReS/D structure provides UTB devices with much lower source/drain series resistance than the conventional elevated source/drain (E-S/D) one and thereby alleviates the critical requirement for contact resistivity in sub-50 nm devices. On the other hand, the ReS/D devices exhibit the very similar short channel effect immunity to that of E-S/D device. The design guidelines and window for the ReS/D devices are also suggested in terms of the simulation results. It is demonstrated that the Re/SD approach can accelerate SOI device scaling to 10 nm node. ? 2006 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2006.306084
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/263326]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ke, Wei,Han, Xu,Li, Dingyu,et al. Recessed source/drain for scaling SOI MOSFET to the limit. 2007-01-01.

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