ION-INDUCED CRYSTALLIZATION AND AMORPHIZATION AT CRYSTAL/AMORPHOUS   INTERFACES OF SILICON

doi:10.1016/0168-583X(95)00369-X

CORC > 北京大学 > 信息科学技术学院

	ION-INDUCED CRYSTALLIZATION AND AMORPHIZATION AT CRYSTAL/AMORPHOUS INTERFACES OF SILICON
	WANG, ZL ; ITOH, N ; MATSUNAMI, N ; ZHAO, QT
刊名	nuclear instruments methods in physics research section b beam interactions with materials and atoms
	1995
关键词	INDUCED EPITAXIAL CRYSTALLIZATION GROWTH IRRADIATION MODEL DYNAMICS REGROWTH DAMAGE
DOI	10.1016/0168-583X(95)00369-X
英文摘要	New empirical equations describing the rate of ion-induced crystallization at a Si crystal/amorphous interface have been developed. In our model, crystallization/amorphization at the interface arises from formation of hot spots and of knock-ons in the collision cascades. It is presumed that the hot spots induce amorphous-to-crystal transformation which lowers the free energy, similarly to heating to high temperatures, and that the bond rearrangement by a series of displacements by knock-ons and recombination to the original lattice point in collision cascades can lead to both crystal-to-amorphous and amorphous-to-crystal transformations. In both hot-spot and knock-on effects, the presence of di-vacancies under irradiation with ion beams is assumed to prohibit crystallization. The model can explain the experimental observation that the crystallization/amorphization rate is scaled by X = phi(1/2)exp(E/2kT), the product of the root of the flux and the inverse of root of the Boltzmann factor for the motion of the di-vacancies. Crystallization rate in the hot-spots derived assuming that an incident ion induces spontaneous crystallization within a characteristic volume along the track reveals that the radius is 10 atomic distances and the thickness of is about 0.3 monolayer for 1.5 MeV Xe ions. The calculated crystallization/amorphization rate fits to experimental results over a wide temperature range.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1995RG16600007&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Instruments & Instrumentation; Nuclear Science & Technology; Physics, Atomic, Molecular & Chemical; Physics, Nuclear; SCI(E); 17; ARTICLE; 4; 493-501; 100
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/258501]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	WANG, ZL,ITOH, N,MATSUNAMI, N,et al. ION-INDUCED CRYSTALLIZATION AND AMORPHIZATION AT CRYSTAL/AMORPHOUS INTERFACES OF SILICON[J]. nuclear instruments methods in physics research section b beam interactions with materials and atoms,1995.
APA	WANG, ZL,ITOH, N,MATSUNAMI, N,&ZHAO, QT.(1995).ION-INDUCED CRYSTALLIZATION AND AMORPHIZATION AT CRYSTAL/AMORPHOUS INTERFACES OF SILICON.nuclear instruments methods in physics research section b beam interactions with materials and atoms.
MLA	WANG, ZL,et al."ION-INDUCED CRYSTALLIZATION AND AMORPHIZATION AT CRYSTAL/AMORPHOUS INTERFACES OF SILICON".nuclear instruments methods in physics research section b beam interactions with materials and atoms (1995).