Nonvolatile resistive switching in single crystalline ZnO nanowires

doi:10.1039/c1nr10096c

CORC > 北京大学 > 信息科学技术学院

	Nonvolatile resistive switching in single crystalline ZnO nanowires
	Yang, Yuchao ; Zhang, Xiaoxian ; Gao, Min ; Zeng, Fei ; Zhou, Weiya ; Xie, Sishen ; Pan, Feng
刊名	nanoscale
	2011
关键词	NANOROD ARRAYS MEMORY DEVICES CHALLENGES RESISTANCE SCIENCE SERIES FILMS
DOI	10.1039/c1nr10096c
英文摘要	We demonstrate nonvolatile resistive switching in single crystalline ZnO nanowires with high ON/OFF ratios and low threshold voltages. Unlike the mechanism of continuous metal filament formation along grain boundaries in polycrystalline films, the resistive switching in single crystalline ZnO nanowires is speculated to be induced by the formation of a metal island chain on the nanowire surface. Resistive memories based on bottom-up semiconductor nanowires hold potential for next generation ultra-dense nonvolatile memories.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000289306900081&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; SCI(E); EI; 57; ARTICLE; 4; 1917-1921; 3
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/241223]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yang, Yuchao,Zhang, Xiaoxian,Gao, Min,et al. Nonvolatile resistive switching in single crystalline ZnO nanowires[J]. nanoscale,2011.
APA	Yang, Yuchao.,Zhang, Xiaoxian.,Gao, Min.,Zeng, Fei.,Zhou, Weiya.,...&Pan, Feng.(2011).Nonvolatile resistive switching in single crystalline ZnO nanowires.nanoscale.
MLA	Yang, Yuchao,et al."Nonvolatile resistive switching in single crystalline ZnO nanowires".nanoscale (2011).