Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by   Diminishing the Diameter to 10 nm

doi:10.1021/nl4040847

CORC > 北京大学 > 信息科学技术学院

	Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 nm
	Pan, Dong ; Fu, Mengqi ; Yu, Xuezhe ; Wang, Xiaolei ; Zhu, Lijun ; Nie, Shuaihua ; Wang, Siliang ; Chen, Qing ; Xiong, Peng ; von Molnar, Stephan ; Zhao, Jianhua
刊名	nano letters
	2014
关键词	InAs nanowires pure phase molecular-beam epitaxy InAs nanowire-based FET III-V NANOWIRES FIELD-EFFECT TRANSISTORS STACKING-FAULTS ZINC-BLENDE ELECTRON TRANSMISSION GAAS NANOWIRES GROWTH MOBILITY MOVPE INP
DOI	10.1021/nl4040847
英文摘要	Here we report the growth of phase-pure InAs nanowires on Si (111) substrates by molecular-beam epitaxy using Ag catalysts. A conventional one-step catalyst annealing process is found to give rise to InAs nanowires with diameters ranging from 4.5 to 81 nm due to the varying sizes of the Ag droplets, which reveal strong diameter dependence of the crystal structure. In contrast, a novel two-step catalyst annealing procedure yields vertical growth of highly uniform InAs nanowires similar to 10 nm in diameter. Significantly, these ultrathin nanowires exhibit a perfect wurtzite crystal structure, free of stacking faults and twin defects. Using these high-quality ultrathin InAs nanowires as the channel material of metal-oxide-semiconductor field-effect transistor, we have obtained a high I-ON/I-OFF ratio of similar to 10(6), which shows great potential for application in future nanodevices with low power dissipation.; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 11; ARTICLE; jhzhao@red.semi.ac.cn; 3; 1214-1220; 14
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/214758]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Pan, Dong,Fu, Mengqi,Yu, Xuezhe,et al. Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 nm[J]. nano letters,2014.
APA	Pan, Dong.,Fu, Mengqi.,Yu, Xuezhe.,Wang, Xiaolei.,Zhu, Lijun.,...&Zhao, Jianhua.(2014).Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 nm.nano letters.
MLA	Pan, Dong,et al."Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 nm".nano letters (2014).