Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular   magnetic anisotropy

doi:10.1038/srep05895

CORC > 北京大学 > 信息科学技术学院

	Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy
	Liu, T. ; Zhang, Y. ; Cai, J. W. ; Pan, H. Y.
刊名	scientific reports
	2014
关键词	RANDOM-ACCESS MEMORY TUNNEL-JUNCTION FILMS MAGNETORESISTANCE DEVICE
DOI	10.1038/srep05895
英文摘要	The recent discovery of perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface has accelerated the development of next generation high-density non-volatile memories by utilizing perpendicular magnetic tunnel junctions (p-MTJs). However, the insufficient interfacial PMA in the typical Ta/CoFeB/MgO system will not only complicate the p-MTJ optimization, but also limit the device density scalability. Moreover, the rapid decreases of PMA in Ta/CoFeB/MgO films with annealing temperature higher than 300 degrees C will make the compatibility with CMOS integrated circuits a big problem. By replacing the Ta buffer layer with a thin Mo film, we have increased the PMA in the Ta/CoFeB/MgO structure by 20%. More importantly, the thermal stability of the perpendicularly magnetized (001) CoFeB/MgO films is greatly increased from 300 degrees C to 425 degrees C, making the Mo/CoFeB/MgO films attractive for a practical p-MTJ application.; Multidisciplinary Sciences; SCI(E); PubMed; 6; ARTICLE; jwcai@iphy.ac.cn; 5895; 4
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/188847]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, T.,Zhang, Y.,Cai, J. W.,et al. Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy[J]. scientific reports,2014.
APA	Liu, T.,Zhang, Y.,Cai, J. W.,&Pan, H. Y..(2014).Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy.scientific reports.
MLA	Liu, T.,et al."Thermally robust Mo/CoFeB/MgO trilayers with strong perpendicular magnetic anisotropy".scientific reports (2014).