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	Fabrication of Nanostructured Titania Thin Film at Low Temperature
	Tang, Guanrong ; Chen, Jing
	2008
关键词	NST Aqueous oxidation masking material
英文摘要	Nanostructured Titania (NST) is attracting more and more attention due to its porousness and high surface to volume ratio. A novel process to fabricate integrated NST thin film at low temperature (80-90 degrees C) is presented. NST features were formed by oxidizing Ti films in aqueous hydrogen peroxide. The optimal conditions of aqueous oxidation are: 85 degrees C, aqueous 10% H(2)O(2) solution, 20 min of water bath time. Crack-free NST features of 100 mu m x 100 mu m were successfully fabricated. Two polymer masking materials, SU8 and Parylene, were proved to be compatible with this process, selective NST oxidation could be carried out at an ultra low temperature below 100 degrees C.; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.2008.4735103
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153469]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Tang, Guanrong,Chen, Jing. Fabrication of Nanostructured Titania Thin Film at Low Temperature. 2008-01-01.

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