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	Understanding the resistance switching mechanisms of binary metal oxides with the percolation model
	Yang, J. F. ; Liu, L. F. ; Sun, B. ; Tang, H. ; Xu, N. ; Wang, Y. ; Liu, X. Y. ; Han, R. Q. ; Kang, J. F. ; Ma, T. P.
	2008
关键词	BREAKDOWN
英文摘要	Binary metal oxide TiO(2) and HfO(2) based resistance switching random access memories were fabricated. The resistance switching mechanisms were studied in terms of percolation processes. Two different switching behaviors were identified by fitting the voltage/power distributions into the Weibull model. Corresponding models were proposed to help better understanding of the resistance switching mechanisms.; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.2008.4734689
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153442]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yang, J. F.,Liu, L. F.,Sun, B.,et al. Understanding the resistance switching mechanisms of binary metal oxides with the percolation model. 2008-01-01.

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