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	A MOS-based behavioral macro-model for ferroelectric capacitors
	Liu, M ; Kang, JF ; Zhang, JH ; Liu, XY ; Han, RQ
	2003
关键词	ferroelectric memory ferroelectric capacitors macro-model hysteresis loop
英文摘要	In this paper, a MOS-based behavioral macro-model for ferroelectric capacitor is proposed. The macro-model consists of two VCCAPs and voltage control switches. A MOS-based circuit provides the control voltage of VCCAPs. The model parameters are extracted from the hysteresis loops measured or provided by the users. By adjusting the model parameters the accurate FE capacitor characteristics could be obtained. Since the behavioral model only consists of MOSFETs and capacitors, it can be simply added to SPICE simulator as a macro-model. Furthermore, this model can also simulate the fixed imprint, relaxation and fatigue effect by adjusting the model parameters based on the branch of hysteresis loop. (C) 2002 Elsevier Science B.V. All rights reserved.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000182725500120&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied; SCI(E); EI; CPCI-S(ISTP); 5
语种	英语
DOI标识	10.1016/S0167-9317(02)01004-3
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153109]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, M,Kang, JF,Zhang, JH,et al. A MOS-based behavioral macro-model for ferroelectric capacitors. 2003-01-01.

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