Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs

doi:10.1109/LED.2008.2007752

CORC > 北京大学 > 信息科学技术学院

	Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs
	Zhuge, Jing ; Wang, Runsheng ; Huang, Ru ; Tian, Yu ; Zhang, Liangliang ; Kim, Dong-Won ; Park, Donggun ; Wang, Yangyuan
刊名	ieee electron device letters
	2009
关键词	Low-frequency noise (LFN) silicon nanowire MOSFETs (SNWTs) 1/F NOISE MOS-TRANSISTORS CMOS DEVICES P-MOSFETS GATE IMPACT TECHNOLOGIES DEGRADATION NM
DOI	10.1109/LED.2008.2007752
英文摘要	Low-frequency noise (LFN) in n-type silicon nanowire MOSFETs (SNWTs) is investigated in this letter. The drain-current spectral density exhibits significant dispersion of up to five orders of magnitude due to the ultrasmall dimensions of SNWTs. The measured results show that LFN in SNWTs can be well described by the correlated-mobility fluctuation model at low drain current, with the effective oxide trap density extracted and discussed. At high drain current, however, the input-referred noise spectral density increases rapidly with the drain current, which indicates the significant impact of the ultranarrow source/drain extension regions of SNWTS. As a result, design optimizations to reduce the impact of parasitic resistance in SNWTs are necessary for analog/RF applications.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000262364200020&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 51; ARTICLE; 1; 57-60; 30
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152839]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhuge, Jing,Wang, Runsheng,Huang, Ru,et al. Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs[J]. ieee electron device letters,2009.
APA	Zhuge, Jing.,Wang, Runsheng.,Huang, Ru.,Tian, Yu.,Zhang, Liangliang.,...&Wang, Yangyuan.(2009).Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs.ieee electron device letters.
MLA	Zhuge, Jing,et al."Investigation of Low-Frequency Noise in Silicon Nanowire MOSFETs".ieee electron device letters (2009).