Numerical analysis for root-mean-square roughness of SiO2/Si interface   on direct tunneling current in ultrathin MOSFETs

doi:10.1016/S0038-1101(01)00038-7

CORC > 北京大学 > 信息科学技术学院

	Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs
	Mao, LF ; Tan, CH ; Xu, MZ
刊名	固体电子学
	2001
关键词	roughness tunneling metal-oxide-semiconductor structure GATE OXIDE SILICON MICROSCOPY MICROROUGHNESS ELLIPSOMETRY DEPENDENCE TRANSPORT LAYER
DOI	10.1016/S0038-1101(01)00038-7
英文摘要	Interface roughness effects on direct tunneling current in ultrathin MOSFETs are investigated by numerical analysis. The interface roughness is described in terms of Gauss distribution. It is shown that the effects of rough surface on tunneling current cannot be neglected while tunneling occurs in the regime of direct tunneling. The effects increase exponentially with oxide thickness or applied voltage across oxide decreasing. This means that the effects become more and more important while the direct tunneling current takes up the main contribution to the gate leakage current. (C) 2001 Elsevier Science Ltd. All rights reserved.; Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 15; ARTICLE; 3; 531-534; 45
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152089]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Mao, LF,Tan, CH,Xu, MZ. Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs[J]. 固体电子学,2001.
APA	Mao, LF,Tan, CH,&Xu, MZ.(2001).Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs.固体电子学.
MLA	Mao, LF,et al."Numerical analysis for root-mean-square roughness of SiO2/Si interface on direct tunneling current in ultrathin MOSFETs".固体电子学 (2001).