Study on the Ge1-xSnx/HfO2 interface and its impacts on Ge1-xSnx   tunneling transistor

doi:10.1063/1.4883760

CORC > 北京大学 > 信息科学技术学院

	Study on the Ge1-xSnx/HfO2 interface and its impacts on Ge1-xSnx tunneling transistor
	Qiu, Yingxin ; Wang, Runsheng ; Huang, Qianqian ; Huang, Ru
刊名	应用物理杂志
	2014
关键词	WAVE MECHANICS FET
DOI	10.1063/1.4883760
英文摘要	In this paper, we employ first-principle calculation to investigate the Ge1-xSnx/HfO2 interface, and then evaluate its impacts on Ge1-xSnx tunneling field-effect transistor (TFET). First-principle calculations of Ge1-xSnx/HfO2 interfaces in the oxygen-rich process atmosphere indicate that the interface states originate from the Ge and Sn dangling bond, rather than Hf-bond. The total density of state shows that there are more interface states in the semiconductor bandgap with increasing Sn fraction. By further incorporating the material and interface parameters from density functional theory calculation into advanced device simulation, the electrical characteristics of Ge1-xSnx TFET are investigated. Removing the Sn atom from the first atom layer of Ge1-xSnx in device processes is found to be beneficial to reduce the degradations. For the degradation mechanisms, the trap-assisted-tunneling is the dominant mechanism at the low Sn fraction, and enhanced Shockley-Read-Hall recombination induced by traps becomes the dominant mechanism with increasing Sn fraction. The results are helpful for the interface optimization of Ge1-xSnx TFET. (C) 2014 AIP Publishing LLC.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000338106000073&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 3; ARTICLE; r.wang@pku.edu.cn; ruhuang@pku.edu.cn; 23; 115
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152086]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Qiu, Yingxin,Wang, Runsheng,Huang, Qianqian,et al. Study on the Ge1-xSnx/HfO2 interface and its impacts on Ge1-xSnx tunneling transistor[J]. 应用物理杂志,2014.
APA	Qiu, Yingxin,Wang, Runsheng,Huang, Qianqian,&Huang, Ru.(2014).Study on the Ge1-xSnx/HfO2 interface and its impacts on Ge1-xSnx tunneling transistor.应用物理杂志.
MLA	Qiu, Yingxin,et al."Study on the Ge1-xSnx/HfO2 interface and its impacts on Ge1-xSnx tunneling transistor".应用物理杂志 (2014).