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	A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under V-g = V-d
	Mu, FC ; Xu, MZ ; Tan, CH ; Duan, XR
	2001
关键词	DEVICE DEGRADATION CHANNEL MOSFETS MODEL TRANSISTORS DAMAGE
英文摘要	Hot-carrier degradation of n-MOSFETs at high gate voltages (V-g = V-d) is examined. A new lifetime prediction 9 method is developed based on the universal power law between the degradation of saturated drain current (dI(dsat)) and the product of the injected charge fluence times the gate current, which is independent of gate or drain voltages. This method is applied to 4 and 5 nm n-MOSFETs and lifetimes are estimated under their operation conditions. It is applicable to n-MOSFETs with ultrathin gate oxides. (C) 2001 Elsevier Science Ltd. All rights reserved.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000172356800021&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied; SCI(E); EI; CPCI-S(ISTP); 4
语种	英语
DOI标识	10.1016/S0026-2714(01)00118-4
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/152062]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Mu, FC,Xu, MZ,Tan, CH,et al. A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under V-g = V-d. 2001-01-01.

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