Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory   device

doi:10.7567/JJAP.54.021802

CORC > 北京大学 > 信息科学技术学院

	Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device
	Liu, Lifeng ; Yu, Di ; Ma, Wenjia ; Chen, Bing ; Zhang, Feifei ; Gao, Bin ; Kang, Jinfeng
刊名	日本应用物理学杂志
	2015
关键词	RRAM
DOI	10.7567/JJAP.54.021802
英文摘要	Ag/SiO2/Pt-based resistive random access memory (RRAM) devices were fabricated and studied. A multilevel resistive switching (RS) characteristic was observed in the Ag/SiO2/Pt-based RRAM devices. Four different resistive states were obtained under both the direct current (DC) sweep mode and the pulse voltage mode. Good endurance and retention characteristics of the Ag/SiO2/Pt RRAM device with multilevel resistance states were demonstrated. The mechanism of multilevel RS was discussed and a multiple-conductive-filament model was used to explain the multilevel RS phenomenon in the Ag/SiO2/Pt-based RRAM devices. (C) 2015 The Japan Society of Applied Physics; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000350091000010&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 7; ARTICLE; lfliu@pku.edu.cn; 2; 54
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/151927]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, Lifeng,Yu, Di,Ma, Wenjia,et al. Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device[J]. 日本应用物理学杂志,2015.
APA	Liu, Lifeng.,Yu, Di.,Ma, Wenjia.,Chen, Bing.,Zhang, Feifei.,...&Kang, Jinfeng.(2015).Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device.日本应用物理学杂志.
MLA	Liu, Lifeng,et al."Multilevel resistive switching in Ag/SiO2/Pt resistive switching memory device".日本应用物理学杂志 (2015).