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Formation mechanism of overlapping grain boundaries in graphene chemical vapor deposition growth
Dong, Jichen ; Wang, Huan ; Peng, Hailin ; Liu, Zhongfan ; Zhang, Kaili ; Ding, Feng
刊名CHEMICAL SCIENCE
2017
关键词SINGLE-CRYSTAL GRAPHENE POLYCRYSTALLINE GRAPHENE EPITAXIAL GRAPHENE COPPER SURFACE ORIENTATION NUCLEATION HYDROGEN METALS FILMS
DOI10.1039/c6sc04535a
英文摘要The formation of grain boundaries (GBs) in graphene films is both fundamentally interesting and practically important for many applications. A GB in graphene is known as a linear defect and is formed during the coalescence of two single crystalline graphene domains. The covalent binding between domains is broadly known as the mechanism of GB formation during graphene chemical vapor deposition (CVD) growth. Here, we demonstrate another GB formation mechanism, where two graphene domains are connected by weak van der Waals interactions between overlapping graphene layers. The formation mechanism of the overlapping GBs (OLGBs) is systematically explored theoretically and the proposed conditions for forming OLGBs are validated by experimental observations. This discovery leads to a deep understanding of the mechanism of graphene CVD growth and reveals potential means for graphene quality control in CVD synthesis.; NSFC [21273189]; Hong Kong RCF-GRF [BQ-26K, B-Q35N, B-Q41N]; SCI(E); ARTICLE; 3; 2209-2214; 8
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/476206]  
专题化学与分子工程学院
推荐引用方式
GB/T 7714
Dong, Jichen,Wang, Huan,Peng, Hailin,et al. Formation mechanism of overlapping grain boundaries in graphene chemical vapor deposition growth[J]. CHEMICAL SCIENCE,2017.
APA Dong, Jichen,Wang, Huan,Peng, Hailin,Liu, Zhongfan,Zhang, Kaili,&Ding, Feng.(2017).Formation mechanism of overlapping grain boundaries in graphene chemical vapor deposition growth.CHEMICAL SCIENCE.
MLA Dong, Jichen,et al."Formation mechanism of overlapping grain boundaries in graphene chemical vapor deposition growth".CHEMICAL SCIENCE (2017).
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