Epitaxial growth of large-area and highly crystalline anisotropic ReSe2   atomic layer

doi:10.1007/s12274-017-1477-7

CORC > 北京大学 > 化学与分子工程学院

	Epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer
	Cui, Fangfang ; Li, Xiaobo ; Feng, Qingliang ; Yin, Jianbo ; Zhou, Lin ; Liu, Dongyan ; Liu, Kaiqiang ; He, Xuexia ; Liang, Xing ; Liu, Shengzhong ; Lei, Zhibin ; Liu, Zonghuai ; Peng, Hailin ; Zhang, Jin ; Kong, Jing ; Xu, Hua
刊名	NANO RESEARCH
	2017
关键词	rhenium diselenide (ReSe2) epitaxial growth high crystal quality anisotropy optoelectronics CHEMICAL-VAPOR-DEPOSITION FIELD-EFFECT TRANSISTORS FEW-LAYER INPLANE ANISOTROPY RAMAN-SPECTROSCOPY BLACK PHOSPHORUS MONOLAYER MOS2 HIGH-QUALITY PHOTODETECTORS SEMICONDUCTOR
DOI	10.1007/s12274-017-1477-7
英文摘要	The anisotropic two-dimensional (2D) layered material rhenium disulfide (ReSe2) has attracted considerable attention because of its unusual properties and promising applications in electronic and optoelectronic devices. However, because of its low lattice symmetry and interlayer decoupling, anisotropic growth and out-of-plane growth occur easily, yielding thick flakes, dendritic structure, or flower-like structure. In this study, we demonstrated a bottom-up method for the controlled and scalable synthesis of ReSe2 by van der Waals epitaxy. To achieve controllable growth, a micro-reactor with a confined reaction space was constructed by stacking two mica substrates in the chemical vapor deposition system. Within the confined reaction space, the nucleation density and growth rate of ReSe2 were significantly reduced, favoring the large-area synthesis of ReSe2 with a uniform monolayer thickness. The morphological evolution of ReSe2 with growth temperature indicated that the anisotropic growth was suppressed at a low growth temperature (<600 degrees C). Field-effect transistors employing the grown ReSe2 exhibited p-type conduction with a current ON/OFF ratio up to 105 and a hole carrier mobility of 0.98 cm(2)/(V.s). Furthermore, the ReSe2 device exhibited an outstanding photoresponse to near-infrared light, with responsivity up to 8.4 and 5.1 A/W for 850- and 940-nm light, respectively. This work not only promotes the large-scale application of ReSe2 in high-performance electronic devices but also clarifies the growth mechanism of low-lattice symmetry 2D materials.; National Natural Science Foundation of China [51502167, 21473110]; fundamental Research Funds for the Central Universities [GK201502003]; Center for Integrated Quantum Materials under NSF [DMR-1231319]; SCI(E); ARTICLE; 8; 2732-2742; 10
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/471940]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Cui, Fangfang,Li, Xiaobo,Feng, Qingliang,et al. Epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer[J]. NANO RESEARCH,2017.
APA	Cui, Fangfang.,Li, Xiaobo.,Feng, Qingliang.,Yin, Jianbo.,Zhou, Lin.,...&Xu, Hua.(2017).Epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer.NANO RESEARCH.
MLA	Cui, Fangfang,et al."Epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer".NANO RESEARCH (2017).