Chemical vapor deposition growth of large-scale hexagonal boron nitride   with controllable orientation

doi:10.1007/s12274-015-0816-9

CORC > 北京大学 > 化学与分子工程学院

	Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation
	Song, Xiuju ; Gao, Junfeng ; Nie, Yufeng ; Gao, Teng ; Sun, Jingyu ; Ma, Donglin ; Li, Qiucheng ; Chen, Yubin ; Jin, Chuanhong ; Bachmatiuk, Alicja ; Ruemmeli, Mark H. ; Ding, Feng ; Zhang, Yanfeng ; Liu, Zhongfan
刊名	NANO RESEARCH
	2015
关键词	hexagonal boron nitride Cu foil domain size orientation chemical vapor deposition (CVD) SCANNING-TUNNELING-MICROSCOPY FIELD-EFFECT TRANSISTORS SINGLE-CRYSTAL GRAPHENE ELECTRONICS GRAIN-BOUNDARIES LAYER GRAPHENE MONOLAYER HETEROSTRUCTURES FILMS FOIL
DOI	10.1007/s12274-015-0816-9
英文摘要	Chemical vapor deposition (CVD) synthesis of large-domain hexagonal boron nitride (h-BN) with a uniform thickness is very challenging, mainly due to the extremely high nucleation density of this material. Herein, we report the successful growth of wafer-scale, high-quality h-BN monolayer films that have large single-crystalline domain sizes, up to similar to 72 A mu m in edge length, prepared using a folded Cu-foil enclosure. The highly confined growth space and the smooth Cu surface inside the enclosure effectively reduced the precursor feeding rate together and induced a drastic decrease in the nucleation density. The orientation of the as-grown h-BN monolayer was found to be strongly correlated to the crystallographic orientation of the Cu substrate: the Cu (111) face being the best substrate for growing aligned h-BN domains and even single-crystalline monolayers. This is consistent with our density functional theory calculations. The present study offers a practical pathway for growing high-quality h-BN films by deepening our fundamental understanding of the process of their growth by CVD.; supported by the National Natural Science Foundation of China,the National Basic Research Program of China,the Ministry of Education; SCI(E); 中国科学引文数据库(CSCD); ARTICLE; feng.ding@polyu.edu.cn; yanfengzhang@pku.edu.cn; zfliu@pku.edu.cn; 10; 3164-3176; 8
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/415940]
专题	化学与分子工程学院工学院
推荐引用方式 GB/T 7714	Song, Xiuju,Gao, Junfeng,Nie, Yufeng,et al. Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation[J]. NANO RESEARCH,2015.
APA	Song, Xiuju.,Gao, Junfeng.,Nie, Yufeng.,Gao, Teng.,Sun, Jingyu.,...&Liu, Zhongfan.(2015).Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation.NANO RESEARCH.
MLA	Song, Xiuju,et al."Chemical vapor deposition growth of large-scale hexagonal boron nitride with controllable orientation".NANO RESEARCH (2015).