Scanning tunneling microscope-based thermochemical hole burning on a   series of charge transfer complexes

doi:10.1063/1.1883315

CORC > 北京大学 > 化学与分子工程学院

	Scanning tunneling microscope-based thermochemical hole burning on a series of charge transfer complexes
	Yu, XC ; Peng, HL ; Ran, CB ; Sun, L ; Zhang, R ; Liu, ZF
刊名	应用物理学快报
	2005
关键词	METAL-INSULATOR-TRANSITION DENSITY DATA-STORAGE SINGLE-MOLECULE DESORPTION TCNQ TIP
DOI	10.1063/1.1883315
英文摘要	A thermochemical hole burning effect was observed on a series of 7, 7, 8, 8-tetracyanoquinodimethane charge transfer complexes when applying a suitable voltage pulse using scanning tunneling microscope, which is attributed to the localized thermochemical decomposition of the complex induced by the current heating effect. The decomposition reaction evolves the low boiling point decomposition components of the charge transfer complex, leaving a nanometer-sized hole on the crystal surface. This effect demonstrates the possibility of creating a ultrahigh density thermochemical hole burning memory, in which information bit is recorded as a hole. (C) 2005 American Institute of Physics.; Physics, Applied; SCI(E); EI; 27; ARTICLE; 13; 1-3; 86
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/253998]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Yu, XC,Peng, HL,Ran, CB,et al. Scanning tunneling microscope-based thermochemical hole burning on a series of charge transfer complexes[J]. 应用物理学快报,2005.
APA	Yu, XC,Peng, HL,Ran, CB,Sun, L,Zhang, R,&Liu, ZF.(2005).Scanning tunneling microscope-based thermochemical hole burning on a series of charge transfer complexes.应用物理学快报.
MLA	Yu, XC,et al."Scanning tunneling microscope-based thermochemical hole burning on a series of charge transfer complexes".应用物理学快报 (2005).