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Highly symmetrical CdS tetrahedral nanocrystals prepared by low-temperature chemical vapor deposition using polysulfide as the sulfur source
Zheng, Jie ; Song, Xubo ; Chen, Nan ; Li, Xingguo
刊名crystal growth design
2008
关键词SEMICONDUCTOR NANOCRYSTALS LUMINESCENCE PROPERTIES CONTROLLABLE SYNTHESIS CONTROLLED GROWTH NANOWIRES PHOTOLUMINESCENCE EVAPORATION NANOBELTS NANORODS CRYSTAL
DOI10.1021/cg700804t
英文摘要In this paper, we report a new scheme for chemical vapor deposition (CVD) of CdS nanocrystals, in which polysulfide and cadmium chloride were used as the sulfur and cadmium source, respectively. During the reaction, hydrogen sulfide was generated by controlled hydrolysis of polysulfide and reacted with cadmium chloride to give CdS. Tetrahedral CdS nanocrystals with homogeneous size and nearly perfect T-d point group symmetry were obtained in high yield. The source and deposition temperature were only 540 and 400 degrees C, respectively, which were significantly lower than those in conventional CVD methods. The low deposition temperature was found critical for the formation of the tetrahedral nanostructures. The photoluminescence spectra of the tetrahedral nanocrystals consisted of a sharp band edge emission peak and a broad band related to trapped states.; Chemistry, Multidisciplinary; Crystallography; Materials Science, Multidisciplinary; SCI(E); 7; ARTICLE; 5; 1760-1765; 8
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/151494]  
专题化学与分子工程学院
工学院
推荐引用方式
GB/T 7714
Zheng, Jie,Song, Xubo,Chen, Nan,et al. Highly symmetrical CdS tetrahedral nanocrystals prepared by low-temperature chemical vapor deposition using polysulfide as the sulfur source[J]. crystal growth design,2008.
APA Zheng, Jie,Song, Xubo,Chen, Nan,&Li, Xingguo.(2008).Highly symmetrical CdS tetrahedral nanocrystals prepared by low-temperature chemical vapor deposition using polysulfide as the sulfur source.crystal growth design.
MLA Zheng, Jie,et al."Highly symmetrical CdS tetrahedral nanocrystals prepared by low-temperature chemical vapor deposition using polysulfide as the sulfur source".crystal growth design (2008).
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