Different growth behaviors of ambient pressure chemical vapor deposition   graphene on Ni(111) and Ni films: A scanning tunneling microscopy study

doi:10.1007/s12274-012-0221-6

CORC > 北京大学 > 化学与分子工程学院

	Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study
	Zhang, Yanfeng ; Gao, Teng ; Xie, Shubao ; Dai, Boya ; Fu, Lei ; Gao, Yabo ; Chen, Yubin ; Liu, Mengxi ; Liu, Zhongfan
刊名	nano research
	2012
关键词	Graphene scanning tunneling microscopy chemical vapor deposition grain boundary nickel FEW-LAYER GRAPHENE LARGE-AREA EPITAXIAL GRAPHENE POLYCRYSTALLINE NI THERMAL-EXPANSION COPPER FOILS CARBON NICKEL GRAPHITE SEGREGATION
DOI	10.1007/s12274-012-0221-6
英文摘要	Graphene growth on the same metal substrate with different crystal morphologies, such as single crystalline and polycrystalline, may involve different mechanisms. We deal with this issue by preparing graphene on single crystal Ni(111) and on similar to 300 nm thick Ni films on SiO2 using an ambient pressure chemical vapor deposition (APCVD) method, and analyze the different growth behaviors for different growth parameters by atomically-resolved scanning tunneling microscopy (STM) and complementary macroscopic analysis methods. Interestingly, we obtained monolayer graphene on Ni(111), and multilayer graphene on Ni films under the same growth conditions. Based on the experimental results, it is proposed that the graphene growth on Ni(111) is strongly templated by the Ni(111) lattice due to the strong Ni-C interactions, leading to monolayer graphene growth. Multilayer graphene flakes formed on polycrystalline Ni films are usually stacked with deviations from the Bernal stacking type and show small rotations among the carbon layers. Considering the different substrate features, the inevitable grain boundaries on polycrystalline Ni films are considered to serve as the growth fronts for bilayer and even multilayer graphene.; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; SCI(E); 中国科学引文数据库(CSCD); 0; ARTICLE; 6; 402-411; 5
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/150916]
专题	化学与分子工程学院工学院
推荐引用方式 GB/T 7714	Zhang, Yanfeng,Gao, Teng,Xie, Shubao,et al. Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study[J]. nano research,2012.
APA	Zhang, Yanfeng.,Gao, Teng.,Xie, Shubao.,Dai, Boya.,Fu, Lei.,...&Liu, Zhongfan.(2012).Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study.nano research.
MLA	Zhang, Yanfeng,et al."Different growth behaviors of ambient pressure chemical vapor deposition graphene on Ni(111) and Ni films: A scanning tunneling microscopy study".nano research (2012).