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	Investigation of the oxidation effect of porous silicon during electroluminescence by in situ FTIR
	Li, JJ ; Wang, RQ ; Liu, ZF ; Cai, SM ; Xiao, XY ; Sun, SG
	1999
关键词	porous silicon in situ FTIR electraluminescence
英文摘要	In situ FTIR spectra of porous silicon are measured during electroluminescence (EL). It was found that oxidation process of porous silicon surface occurs during EL, which is the main reason of the EL intensity decrease and red shift of peak energy with time.; Crystallography; SCI(E); CPCI-S(ISTP); 2
语种	英语
DOI标识	10.1080/10587259908023492
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/150556]
专题	化学与分子工程学院
推荐引用方式 GB/T 7714	Li, JJ,Wang, RQ,Liu, ZF,et al. Investigation of the oxidation effect of porous silicon during electroluminescence by in situ FTIR. 1999-01-01.

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