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	Boundary treatments in non-equilibrium Green's function (NEGF) methods for quantum transport in nano-MOSFETs
	Jiang, Haiyan ; Shao, Sihong ; Cai, Wei ; Zhang, Pingwen
	2008
关键词	non-equilibrium Green&apos self-energy quantum transport Schrodinger equation nano-devices MOSFET SCHRODINGER-EQUATION NANOSCALE TRANSISTORS NUMERICAL-SOLUTION ELEMENT METHODS SIMULATION APPROXIMATION s function (NEGF)
英文摘要	Non-equilibrium Green's function (NEGF) is a general method for modeling non-equilibrium quantum transport in open mesoscopic systems with many body scattering effects. In this paper, we present a unified treatment of quantum device boundaries in the framework of NEGF with both finite difference and finite element discretizations. Boundary treatments for both types of numerical methods, and the resulting self-energy Sigma for the NEGF formulism, representing the dissipative effects of device contacts on the transport, are derived using auxiliary Green's functions for the exterior of the quantum devices. Numerical results with both discretization schemes for an one-dimensional nano-device and a 29 nm double gated MOSFET are provided to demonstrate the accuracy and flexibility of the proposed boundary treatments. (C) 2008 Elsevier Inc. All rights reserved.; Computer Science, Interdisciplinary Applications; Physics, Mathematical; SCI(E); 20; ARTICLE; 13; 6553-6573; 227
语种	英语
出处	SCI
出版者	计算物理学杂志
内容类型	其他
源URL	[http://hdl.handle.net/20.500.11897/157801]
专题	数学科学学院
推荐引用方式 GB/T 7714	Jiang, Haiyan,Shao, Sihong,Cai, Wei,et al. Boundary treatments in non-equilibrium Green's function (NEGF) methods for quantum transport in nano-MOSFETs. 2008-01-01.

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