Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current

CORC > 金属研究所 > 中国科学院金属研究所

	Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current
	Zhao, XT; Zhao, YQ; Liu, W; Dai, ZM; Wang, TT; Zhao, XG; Zhang, ZD; Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
刊名	JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
	2018-05-01
卷号	34 期号:5 页码:832-835
关键词	Tunnel-junctions Domain-structure Thin-films Torque Layer Co/ru
ISSN号	1005-0302
英文摘要	By inserting an ultrathin Pt layer at Co/Ru interface, we established antiferromagnetic coupling with out-of-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering. To achieve configuration suitable for free layer, the magnetic properties of the stacks have been investigated by changing the thickness of Co, Ru and Pt layers using an orthogonal wedges technique. It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness. Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop. The switching magnetization of synthetic antiferromagnetic (SAF) structure is achieved by DC current under an in-plane static magnetic field of +/- 500 Oe. This structure is very promising for free layer in spintronic application. (C) 2017 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.; By inserting an ultrathin Pt layer at Co/Ru interface, we established antiferromagnetic coupling with out-of-plane magnetization in Co/Ru/Co film stacks fabricated by sputtering. To achieve configuration suitable for free layer, the magnetic properties of the stacks have been investigated by changing the thickness of Co, Ru and Pt layers using an orthogonal wedges technique. It is found that magnetic properties for upper Co layer thinner than 0.5 nm are sensitive to little change in Ru thickness. Improving continuity of upper Co layer by slightly increasing the thickness can effectively increase the squareness of minor loop. The switching magnetization of synthetic antiferromagnetic (SAF) structure is achieved by DC current under an in-plane static magnetic field of +/- 500 Oe. This structure is very promising for free layer in spintronic application. (C) 2017 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
学科主题	Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种	英语
资助机构	National Natural Science Foundation of China [51590883, 51331006, 51471167]; Chinese Academy of Sciences [KJZD-EW-M05-3]
公开日期	2018-06-05
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/79334]
专题	金属研究所_中国科学院金属研究所
通讯作者	Liu, W (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China.
推荐引用方式 GB/T 7714	Zhao, XT,Zhao, YQ,Liu, W,et al. Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current[J]. JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,2018,34(5):832-835.
APA	Zhao, XT.,Zhao, YQ.,Liu, W.,Dai, ZM.,Wang, TT.,...&Liu, W .(2018).Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current.JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY,34(5),832-835.
MLA	Zhao, XT,et al."Magnetization reversal of antiferromagnetically coupled perpendicular anisotropy films driven by current".JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY 34.5(2018):832-835.