Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3

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	Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3
	Cui, CJ; Hu, WJ; Yan, XG; Addiego, C; Gao, WP; Wang, Y; Wang, Z; Li, LZ; Cheng, YC; Li, P
刊名	NANO LETTERS
	2018-02-01
卷号	18 期号:2 页码:1253-1258
关键词	Thin-films Phase-transformation Alpha-in2se3 Piezoelectricity Temperature Discovery Crystal
ISSN号	1530-6984
英文摘要	Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered alpha-In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically inter correlated out-of-plane and in-plane polarization, where the reversal. of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (similar to 1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory, device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.; Enriching the functionality of ferroelectric materials with visible-light sensitivity and multiaxial switching capability would open up new opportunities for their applications in advanced information storage with diverse signal manipulation functions. We report experimental observations of robust intralayer ferroelectricity in two-dimensional (2D) van der Waals layered alpha-In2Se3 ultrathin flakes at room temperature. Distinct from other 2D and conventional ferroelectrics, In2Se3 exhibits intrinsically inter correlated out-of-plane and in-plane polarization, where the reversal. of the out-of-plane polarization by a vertical electric field also induces the rotation of the in-plane polarization. On the basis of the in-plane switchable diode effect and the narrow bandgap (similar to 1.3 eV) of ferroelectric In2Se3, a prototypical nonvolatile memory, device, which can be manipulated both by electric field and visible light illumination, is demonstrated for advancing data storage technologies.
学科主题	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
语种	英语
资助机构	King Abdullah University of Science and Technology (Saudi Arabia); Department of Energy (DOE), Office of Basic Energy Sciences, Division of Materials Science and Engineering [DE-5C0014430]; Irvine Materials Research Institute (IMRI)
公开日期	2018-06-05
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/79539]
专题	金属研究所_中国科学院金属研究所
通讯作者	Hu, WJ; Li, LJ (reprint author), King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Jeddah 239556900, Saudi Arabia.; Hu, WJ (reprint author), Chinese Acad Sci, Shenyang Natl Lab Mat Sci, Inst Met Res, Shenyang 110016, Liaoning, Peoples R China.; Pan, XQ (reprint author), Univ Calif Irvine, Dept Chem Engn & Mat Sci, Irvine, CA 92697 USA.; Pan, XQ (reprint author), Univ Calif Irvine, Dept Phys & Astron, Irvine, CA 92697 USA.; Li, LJ (reprint author), Taiwan Semicond Mfg Co, Corp Res & Chief Technol Off, Hsinchu 30075, Taiwan.
推荐引用方式 GB/T 7714	Cui, CJ,Hu, WJ,Yan, XG,et al. Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3[J]. NANO LETTERS,2018,18(2):1253-1258.
APA	Cui, CJ.,Hu, WJ.,Yan, XG.,Addiego, C.,Gao, WP.,...&Li, LJ .(2018).Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3.NANO LETTERS,18(2),1253-1258.
MLA	Cui, CJ,et al."Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3".NANO LETTERS 18.2(2018):1253-1258.