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	Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure
	Chen, MJ; Ning, XK; Fu, GS; Wang, SF; Wang, F1; Yu, T2; Liu, P; Wang, JL; Liu, W1; Zhang, ZD
刊名	APPLIED PHYSICS EXPRESS
	2018-07-01
卷号	11期号:7页码:-
ISSN号	1882-0778
DOI	10.7567/APEX.11.075701
英文摘要	Understanding and controlling the metal-insulator transition (MIT) can provide great opportunities for electronic devices. Here, artificial LaNiO3/(NiO)(n)/LaNiO3 has been synthesized. MIT temperatures have been tuned by changing the thickness of the artificial NiO insert layer. The Ni 2p core-level spectra and O K-edge have been investigated. The linear relationship between the hybridization T (or bandwidth W) and the MIT temperature has been clearly demonstrated. In this work, we realized the Mott ground state by modulating the parameters of T and the covalency W, which might be significant for the development of multifunctional materials. (C) 2018 The Japan Society of Applied Physics
学科主题	Physics, Applied
语种	英语
WOS记录号	WOS:000435632600001
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/80123]
专题	金属研究所_中国科学院金属研究所
作者单位	1.Hebei Univ, Coll Phys Sci & Technol, Hebei Key Lab Opt Elect Informat & Mat, Baoding 071002, Peoples R China 2.Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Liaoning, Peoples R China 3.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
推荐引用方式 GB/T 7714	Chen, MJ,Ning, XK,Fu, GS,et al. Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure[J]. APPLIED PHYSICS EXPRESS,2018,11(7):-.
APA	Chen, MJ.,Ning, XK.,Fu, GS.,Wang, SF.,Wang, F.,...&Zhang, ZD.(2018).Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure.APPLIED PHYSICS EXPRESS,11(7),-.
MLA	Chen, MJ,et al."Engineered Mott ground state in artificial LaNiO3/(NiO)(n)/LaNiO3 heterostructure".APPLIED PHYSICS EXPRESS 11.7(2018):-.

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